High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate - Electronics Letters
نویسندگان
چکیده
Using inductively-coupled-plasma reactive ion etching (ICP-RIE), recessed 1 mm gate-length enhancement-mode (E-mode) AlGaN=GaN high electron mobility transistors (HEMTs) were fabricated. These 1 mm gate-length devices exhibited maximum drain current density of 470 mA=mm, extrinsic transconductance of 248 mS=mm and threshold voltage of 75 mV. These characteristics are much higher than previously reported values for GaN-based E-mode HEMTs. A unity gain cutoff frequency ( fT) of 8 GHz and a maximum frequency of oscillation ( fmax) of 26 GHz were also measured on these devices.
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تاریخ انتشار 2001